OMH3075 Hall Effect Sensor Total Ionizing Dose Test Report

The purpose of this test was to characterize the OMH3075 Hall Effects sensor degradation for total dose response. The device samples were exposed to low dose irradiations using gamma radiation. Device parameters such as magnetic operating points, leakage currents, supply currents, and rise and fall times were investigated

SEE Test and Data Analysis for Complex FPGA Systems

Critical space applications require knowledge of single event upset (SEU) susceptibility (mission survivability). Generic SEU test and analysis techniques do not provide adequate data for survivability analysis. This presentation provides information on how to: (1) Investigate (test for) SEU susceptibilities of tactical (mission specific) designs that are implemented in a SRAM-based FPGA; and (2) Analyze SEU cross-sections for use in survivability prediction

Taking Smallsats to the Next Level - Sensible Radiation Requirements and Qualification That Won\u27t Break the Bank

The natural space radiation environment can be considered harsh for semiconductor electronics that make up SmallSat instruments and systems. Radiation effects impact Electrical, Electronic, and Electromechanical (EEE) device performance in multiple ways: semiconductor material degradation and charge creation within the device. SmallSats usually achieve their goals by utilizing commercial-off-the-shelf (COTS) components, which can be considered more susceptible to radiation effects than high reliability components which have higher piece part costs. The impacts can accrue over the mission life or have instantaneous repercussions, thus, they are highly dependent on the mission environment. Unique mission launch date (period within the solar cycle), duration, and destination (orbit) determine the resultant radiation hazard. SmallSats are seeking a way to plan for operation in environments beyond low inclination, Low Earth Orbit (LEO), and short lifetime. In order to succeed with budget and schedule limitations experienced on the SmallSat paradigm, they will need to adopt practices of radiation hardness assurance (RHA). Radiation requirements and testing need to be tailored such that they do not impose overburden

Radiation Hardness Assurance: Evolving for NewSpace

During the past decade, numerous small satellites have been launched into space, with dramatically expanded dependence on advanced commercial-off-the-shelf (COTS) technologies and systems required for mission success. While the radiation effects vulnerabilities of small satellites are the same as those of their larger, traditional relatives, revised approaches are needed for risk management because of differences in technical requirements and programmatic resources. While moving to COTS components and systems may reduce direct costs and procurement lead times, it undermines many cost-reduction strategies used for conventional radiation hardness assurance (RHA). Limited resources are accompanied by a lack of radiation testing and analysis, which can pose significant risksor worse, be neglected altogether. Small satellites have benefited from short mission durations in low Earth orbits with respect to their radiation response, but as mission objectives grow and become reliant on advanced technologies operating for longer and in harsher environments, requirements need to reflect the changing scope without hindering developers that provide new capabilities

Radiation Hardness Assurance (RHA) Guideline

Radiation Hardness Assurance (RHA) consists of all activities undertaken to ensure that the electronics and materials of a space system perform to their design specifications after exposure to the mission space environment. The subset of interests for NEPP and the REAG, are EEE parts. It is important to register that all of these undertakings are in a feedback loop and require constant iteration and updating throughout the mission life. More detail can be found in the reference materials on applicable test data for usage on parts

Single-Event Testing of the Texas Instruments SNV54LVC00AW Quadruple 2-Input Positive-NAND Gates

The purpose of this testing was to characterize the Texas Instruments SNV54LVC00AW for single-event latchup (SEL) in support of a NASA GSFC flight program. The SNV54LVC00A quadruple 2-input positive-NAND gate. These devices were tested at the Berkeley Accelerator Space Effects (BASE) Facility at Lawrence Berkeley National Laboratory (LBNL) where they were irradiated with the 10 MeV/amu heavy ion cocktail

AD620SQ/883B Total Ionizing Dose Radiation Lot Acceptance Report for RESTORE-LEO

A Radiation Lot Acceptance Test was performed on the AD620SQ/883B, Lot 1708D, in accordance with MIL-STD-883, Method 1019, Condition D. Using a Co-60 source 4 biased parts and 4 unbiased parts were irradiated at 10 mrad/s (0.036 krad/hr) in intervals of approximately 1 krad from 3-10 krads, and ones of 5 krads from 10-25 krads, where it was annealed while unbiased at 25 degrees Celsius, for 2 days, and then, subsequently, annealed while biased at 25 degrees celsius, for another 7 days

Micron MT29F128G08AJAAA 128GB Asynchronous Flash Memory Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust

LM193 Dual Differential Comparator Total Ionizing Dose Test Report

The purpose of this test was to characterize the flight lot of Texas Instruments' LM193 (flight part number is 5962-9452601Q2A) for total dose response. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) was determined

A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash

Single-event effects and total ionizing dose testing is described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results